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IXFR 21N100Q
Symbol
Test Conditions
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
min.
typ.
max.
ISOPLUS 247 OUTLINE
g fs
V DS = 10 V; I D = I T
Notes 2, 3
16
22
S
C iss
5900
pF
C oss
C rss
t d(on)
t r
t d(off)
t f
V GS = 0 V, V DS = 25 V, f = 1 MHz
V GS = 10 V, V DS = 0.5 ? V DSS , I D = I T
R G = 1 ? (External), Notes 2, 3
550
90
21
18
60
12
pF
pF
ns
ns
ns
ns
Q G(on)
170
nC
1 Gate, 2 Drain (Collector)
Q GS
Q GD
V GS = 10 V, V DS = 0.5 ? V DSS , I D = I T
Notes 2, 3
38
75
nC
nC
Dim.
3 Source (Emitter)
4 no connection
Millimeter
Inches
R thJC
R thCK
0.15
0.35
K/W
K/W
A
A 1
A 2
Min. Max.
4.83 5.21
2.29 2.54
1.91 2.16
Min. Max.
.190 .205
.090 .100
.075 .085
b
b 1
b 2
C
1.14 1.40
1.91 2.13
2.92 3.12
0.61 0.80
.045 .055
.075 .084
.115 .123
.024 .031
Source-Drain Diode
Symbol Test Conditions
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
min. typ. max.
D
E
e
L
L1
20.80 21.34
15.75 16.13
5.45 BSC
19.81 20.32
3.81 4.32
.819 .840
.620 .635
.215 BSC
.780 .800
.150 .170
I S
I SM
V GS = 0 V
Repetitive; Note 1
21
84
A
A
Q
R
5.59 6.20
4.32 4.83
.220 .244
.170 .190
V SD
t rr
Q RM
I RM
I F = I T , V GS = 0 V, Notes 2, 3
I F = I S ,-di/dt = 100 A/ μ s, V R = 100 V
1.4
8
1.5
250
V
ns
μ C
A
Note: 1. Pulse width limited by T JM
2. Pulse test, t ≤ 300 μ s, duty cycle d ≤ 2 %
3. I T = 10.5A
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
6,306,728B1
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